Short-Circuit Protection for SiC MOSFET Based on PCB-Type Rogowski Current Sensor: Design Guidelines, Practical Solutions, and Performance Validation
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea
2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea
Funder
Korea Institute of Energy Technology Evaluation and Planning
Ministry of Trade, Industry and Energy
Sector Coupling Energy Industry Advancement Manpower Training Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10413575/10345734.pdf?arnumber=10345734
Reference34 articles.
1. Silicon carbide benefits and advantages for power electronics circuits and systems
2. Robustness in short-circuit mode of SiC MOSFETs;Chen
3. Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions
4. A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs
5. Understanding the short circuit protection for silicon carbide MOSFETs;Instruments,2018
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