In-situ R DS(on) Characterization and Lifetime Projection of GaN HEMTs Under Repetitive Overvoltage Switching
Author:
Affiliation:
1. Efficient Power Conversion Corporation, El Segundo, CA, USA
2. Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10197471/10164152.pdf?arnumber=10164152
Reference18 articles.
1. A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
2. Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
3. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
4. Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling
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1. Minimizing Output Capacitance Loss in GaN Power HEMT;IEEE Transactions on Power Electronics;2024-08
2. Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
3. Proposing a Duty Cycle Based Repetitive Drain Overvoltage Specification for GaN HEMTs;IEEE Power Electronics Magazine;2024-03
4. Dynamic R ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01
5. Investigation into the On-Resistance Shift Phenomenon of 650V Commercial GaN Power Devices with Different Structures;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10
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