Investigation of a Double Gate Work-function Engineered Ge-Source Vertical TFET-Reference-Cited by-同舟云学术

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Investigation of a Double Gate Work-function Engineered Ge-Source Vertical TFET

Published:2022-12-21 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)
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Author:

Chawla Tulika¹,Khosla Mamta²,Raj Balwinder³

Affiliation:

1. National Institute of Technology,Nano electronics Research lab,Jalandhar,India

2. National Institute of Technology,Department of Electronics and Communication Engineering,India

3. NITTTR,Department of Electronics and Communication Engineering,Chandigarh,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117603/10119237/10119274.pdf?arnumber=10119274

Reference28 articles.

1. Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor

2. Determination of Strength Parameters of Glass Fibers Reinforced Composites for Engineering Applications

3. Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor

4. Germanium-based transistors for future high performance and low power logic applications

5. Study of Random Variation in Germanium-Source Vertical Tunnel FET

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