Total dose hardness of field programmable gate arrays-Reference-Cited by-同舟云学术

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Total dose hardness of field programmable gate arrays

Published:1994-12 Issue:6 Volume:41 Page:2487-2493
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Lum G.K.,May R.J.,Robinette L.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/7975/00340606.pdf?arnumber=340606

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation-degradation Analysis and a Circuit Performance Improvement Method for Optoelectronic Field Programmable Gate Array;2019 32nd IEEE International System-on-Chip Conference (SOCC);2019-09

2. High total-ionizing-dose tolerance field programmable gate array;2018 IEEE International Symposium on Circuits and Systems (ISCAS);2018-05

3. Total dose ionizing irradiation effects on a static random access memory field programmable gate array;Journal of Semiconductors;2012-03

4. Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array;Acta Physica Sinica;2011

5. Ionizing radiation effects in XC4036X field programmable gate arrays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-03

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