Hot Carrier Degradation in a Class of Radio Frequency n-Channel LDMOS Transistors-Reference-Cited by-同舟云学术

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Hot Carrier Degradation in a Class of Radio Frequency n-Channel LDMOS Transistors

Published:2006-03 Issue: Volume: Page:
ISSN:
Container-title:2006 IEEE International Reliability Physics Symposium Proceedings
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Author:

Manzini S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4017118/4017119/04017180.pdf?arnumber=4017180

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A High-Performance and Low HCI Degradation LDMOS Device With a Hybrid Field Plate;IEEE Journal of the Electron Devices Society;2024

2. A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor;IEEE Transactions on Device and Materials Reliability;2018-06

3. Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation;IEEE Transactions on Electron Devices;2011-11

4. A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs;Microelectronics Reliability;2011-02

5. Evaluation of Hot-Electron Effect on LDMOS Device and Circuit Performances;IEEE Transactions on Electron Devices;2008-06

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