In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement-Reference-Cited by-同舟云学术

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In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 IEEE International Reliability Physics Symposium Proceedings
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Author:

Chattopadhyay K.,Schravendijk B.,Mountsier T.,Alers G.,Hornbeck M.,Wu H.,Shaviv R.,Harm G.,Vitkavage D.,Apen E.,Yu Y.,Havemann R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4017118/4017119/04017144.pdf?arnumber=4017144

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vapor deposited thin organic–inorganic capping layers preventing copper line oxidation in polymer-based RDL technologies;Microelectronic Engineering;2022-10

2. Photosensitive polymer reliability for fine pitch RDL applications;2020 IEEE 70th Electronic Components and Technology Conference (ECTC);2020-06

3. Demonstration of High Electrical Reliability of Sub-2 Micron Cu Traces Covered with Inorganic Dielectrics for Advanced Packaging Technologies;2017 IEEE 67th Electronic Components and Technology Conference (ECTC);2017-05

4. A Characterized Redistribution Layer Architecture for Advanced Packaging Technologies;2016 IEEE 66th Electronic Components and Technology Conference (ECTC);2016-05

5. Environmentally assisted debonding of copper/barrier interfaces;Acta Materialia;2012-03

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