Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration
Author:
Arimura H.1,
Mertens H.1,
Franco J.1,
Lukose L.1,
Maqsood W.1,
Brus S.1,
Chiarella T.1,
Impagnatiello A.1,
Homkar S.2,
Mootheri V. K.2,
Yin C.2,
Verni G. A.3,
Givens M.2,
Lima L. P. B.1,
Biesemans S.1,
Horiguchi N.1
Affiliation:
1. Imec,Leuven,Belgium
2. ASM,Leuven,Belgium
3. ASM,Helsinki,Finland