Novel Material, Process and Device Innovations for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology
Author:
Vyas Pratik B.1, Megalini Ludovico1, Pal Ashish1, Holt Joshua1, Kumar Archana1, Weeks Stephen1, Zhao Charisse1, Date Lucien1, Lo Hansel1, Khoury Michel1, Muhammad Safdar1, Piallat Fabian1, Fang Ricky1, Charles William1, Palit Pratim1, Yang Jinghe1, Zhang Qintao1, Oh Jang Seok1, Turner Bryan1, Hong Samphy1, Pitchiya Aswin Prathap1, Briggs Benjamin1, Yang Jiao1, Yang Dae1, Wang Fengshou1, Lee Joseph1, Prabhu Gopal1, Ho Dustin1, Caballero Carlos1, Chaturvedula Durga1, Yuan Zheng1, Zheng Yi1, Britz David A.1, Krause Stephen1, Sreenivasan Raghav1, Chudzik Michael1, Kengeri Subi1, Krishnan Siddarth1, Bazizi El Mehdi1
Affiliation:
1. Applied Materials Inc.,Santa Clara,California,USA
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