Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer-Reference-Cited by-同舟云学术

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Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer

Published:2024-06-16 Issue: Volume:8 Page:1-2
ISSN:
Container-title:2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Yoo Sijung¹,Kim Donghoon¹,Choe Duk-Hyun¹,Lee Hyun Jae¹,Lee Yunseong¹,Jo Sanghyun¹,Park Yoonsang¹,Kim Ki Hong¹,Jung Kyooho¹,Jung Moonil¹,Lee Kwang-Hee¹,Yang Jee-Eun¹,Kim Sangwook¹,Nam Seung-Geol¹

Affiliation:

1. Device Research Center, Samsung Advanced Institute of Technology, Samsung Electronics,Thin Film Technical Unit,Suwon,Gyeongi-do,Korea,16678

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631534.pdf?arnumber=10631534

Reference8 articles.

1. VLSI 85: VLSI design of digital systems

2. A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures

3. VLSI'87: VLSI design of digital systems

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