Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology-Reference-Cited by-同舟云学术

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Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology

Published:2024-06-16 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Gaddam Venkateswarlu¹,Hwang Junghyeon¹,Shin Hunbeom¹,Kim Chaeheon¹,Kim Giuk¹,Kim Hyung-Jun²,Lee Jooho²,Kim Hyun-Cheol³,Park Bumsu³,Lim Suhwan³,Kim Sang Yun³,Kim Kwangsoo³,Lee Sungho³,Ha Daewon³,Ahn Jinho⁴,Jeon Sanghun¹

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology,Daejeon,Republic of Korea

2. SAIT,Suwon,Gyeonggi-do,Republic of Korea

3. Samsung Electronics,Hwaseong,Gyeonggi-do,Republic of Korea

4. Hanyang University,Division of Materials Science and Engineering,Seoul,Korea,04763

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631348.pdf?arnumber=10631348

Reference12 articles.

1. Future of dynamic random-access memory as main memory

2. High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal

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