On the Reliability of High-Performance Dual Gate (DG) W-Doped In<sub>2</sub>O<sub>3</sub> FET-Reference-Cited by-同舟云学术

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On the Reliability of High-Performance Dual Gate (DG) W-Doped In₂O₃ FET

Published:2024-06-16 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Aabrar Khandker Akif¹,Park Hyeonwoo¹,Kirtania Sharadindu G.¹,Sarkar Eknath¹,Al Mamun Md Abdullah²,Deng Sunbin¹,Zhang Chengyang¹,Rayner Gilbert B.³,Cho Kyeongjae²,Datta Suman¹

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,Georgia,USA,30332

2. University of Texas at Dallas,Department of Materials Science and Engineering,Richardson,TX,USA,75080

3. Kurt J. Lesker Company,Jefferson Hills,Pennsylvania,15025

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631312.pdf?arnumber=10631312

Reference17 articles.

1. VLSI

2. APL

3. APL

4. Nanotech

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