Design of a Charge Sensitive Amplifier for Silicon Particle Detector in BCD 180 nm Process

Author:

Yadav Indu,Joshi Ashish,Ruscino Ettore,Liberali Valentino,Andreazza Attilio,Shrimali Hitesh

Publisher

IEEE

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. CMOS Folded-Cascode versus Inverter-based CSA towards Noise Performance and Speed;2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST);2023-06-28

2. A Comprehensive Survey of Readout Strategies for SiPMs Used in Nuclear Imaging Systems;Photonics;2021-07-07

3. Design of HV-CMOS Detectors in BCD Technology with Noise and Crosstalk Measurements;2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2019-11

4. Noise and crosstalk models of the particle detector with zero-pole transformation charge sensitive amplifier;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2019-09

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