Lithography with high depth of focus by an ion projection system
Author:
Affiliation:
1. Fraunhofer-Inst. fuer Mikrostrukturtech., Berlin, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
http://xplorestaging.ieee.org/ielx4/84/4761/00186390.pdf?arnumber=186390
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Multi-aperture extraction system with micro-beamlet switching capability;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-11
2. Ion Projection Lithography for Nano Patterning;MRS Proceedings;1999
3. DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing;Microelectronic Engineering;1998-03
4. HPR 506 photoresist used as a positive tone ion resist;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11
5. Ion projection lithography over wafer topography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11
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