Strained-SOI n-Channel Transistor With Silicon–Carbon Source/Drain Regions for Carrier Transport Enhancement-Reference-Cited by-同舟云学术

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Strained-SOI n-Channel Transistor With Silicon–Carbon Source/Drain Regions for Carrier Transport Enhancement

Published:2006-09 Issue:9 Volume:27 Page:778-780
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chui K.-J.,Ang K.-W.,Chin H.-C.,Shen C.,Wong L.-Y.,Tung C.-H.,Balasubramanian N.,Li M.F.,Samudra G.S.,Yeo Y.-C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/35457/01683876.pdf?arnumber=1683876

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4. Optimization of SiC:P Raised Source Drain Epitaxy for Planar 20nm Fully Depleted SOI MOSFET Structures;ECS Transactions;2013-03-15

5. Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices;Thin Solid Films;2012-02

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