Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate-Reference-Cited by-同舟云学术

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Oxide-silicon-oxide buffer structure for ultralow temperature polycrystalline silicon thin-film transistor on plastic substrate

Published:2006-07 Issue:7 Volume:27 Page:579-581
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yong-Hae Kim ,Choong-Heui Chung ,Jaehyun Moon ,Gi Heon Kim ,Dong-Jin Park ,Dae-Won Kim ,Jung Wook Lim ,Sun Jin Yun ,Yoon-Ho Song ,Jin Ho Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/34473/01644833.pdf?arnumber=1644833

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification;IEEE Electron Device Letters;2018

2. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes;Journal of Semiconductors;2018-01

3. Review of recent advances in flexible oxide semiconductor thin-film transistors;Journal of Information Display;2017-10-02

4. A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide;Applied Physics Letters;2017-07-10

5. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates;Japanese Journal of Applied Physics;2015-03-20

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