2.8-3.8 GHz Broadband InGaP/GaAs HBT Doherty Power Amplifier IC for 5G New Radio Handset
Author:
Affiliation:
1. Sungkyunkwan University,Department of Electrical and Computer Engineering,Republic of Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865575.pdf?arnumber=9865575
Reference8 articles.
1. Design of Bandwidth-Enhanced Doherty Power Amplifiers for Handset Applications
2. Design of Doherty Power Amplifiers for Handset Applications
3. A Bandwidth-Optimized Transformer-Based Doherty Power Amplifier for 5G Power Class 2 Handset operation at 2.2 GHz-2.7 GHz
4. A High-Efficiency Two-Stage GaAs HBT Doherty Power Amplifier With Thermal Compensation for WLAN Application
5. A 24.5–29.5GHz Broadband Parallel-to-Series Combined Compact Doherty Power Amplifier in 28-nm Bulk CMOS for 5G Applications
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Highly Linear and Efficient Differential Power Amplifier with 35-dBm Saturated Output Power, 65% Peak PAE by Reducing Base Voltage Peaking in InGaP/GaAs HBT Process for Handset Applications;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. A High Efficiency and High Linearity GaAs HBT Doherty Power Amplifier for 5G NR 3.4V Application;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. A 6-/12-dB Back-off Multi-Mode GaN MMIC Doherty Power Amplifier for 5G Applications;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
4. Linearity Enhanced Broadband Darlington Power Amplifier IC Using InGaP/GaAs HBT for Handset Modules with Fractional Bandwidth of 50%;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
5. Broadband InGaP/GaAs HBT Doherty Power Amplifier IC Using Direct Interstage Power Division for Compact 5G NR Handset Module;IEEE Access;2023
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