Study of W centers formation in silicon upon ion implantation and rapid thermal annealing-Reference-Cited by-同舟云学术

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Study of W centers formation in silicon upon ion implantation and rapid thermal annealing

Published:2023-07 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Photonics Society Summer Topicals Meeting Series (SUM)
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Author:

Andrini G.¹,Zanelli G.²,Tchernij S. Ditalia²,Corte E.²,Hernandez E. Nieto²,Verna A.³,Cocuzza M.³,Bernardi E.⁴,Virzi S.⁴,Traina P.⁴,Degiovanni I.P.⁴,Olivero P.²,Genovese M.⁴,Forneris J.²

Affiliation:

1. Istituto Nazionale di Fisica Nucleare (INFN),Sezione di Torino,Italy,10125

2. Universita di Torino,Dipartimento di Fisica,Italy,10125

3. Politecnico di Torino,Dipartimento di Scienza Applicata e Tecnologia,Italy,10129

4. Istituto Nazionale di Ricerca Metrologica (INRiM),Torino,Italy,10135

Funder

European Research Council

Ministry of Education

Compagnia di San Paolo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10224359/10224363/10224442.pdf?arnumber=10224442

Reference6 articles.

1. Optimization of photoluminescence from W centers in silicon-on-insulator

2. Detection of Single W-Centers in Silicon

3. Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

4. Wafer-scale nanofabrication of telecom single-photon emitters in silicon

5. Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

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1. Solid-State Color Centers for Single-Photon Generation;Photonics;2024-02-19

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