Design considerations for tunneling MOSFETs based on staggered heterojunctions for ultra-low-power applications-Reference-Cited by-同舟云学术

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Design considerations for tunneling MOSFETs based on staggered heterojunctions for ultra-low-power applications

Published:2009-06 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE Nanotechnology Materials and Devices Conference
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Author:

Wang Lingquan,Asbeck Peter

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5159342/5167519/05167534.pdf?arnumber=5167534

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of cylindrical surrounding-gate GaAs x Sb 1− x /In y Ga 1− y As heterojunction tunneling field-effect transistors;Chinese Physics B;2016-09-23

2. Applications of DNA Nanotechnology in Synthesis and Assembly of Inorganic Nanomaterials;Chinese Journal of Chemistry;2016-03

3. Impact of gate leakage considerations in tunnel field effect transistor design;Japanese Journal of Applied Physics;2014-06-05

4. Low-power tunnel field effect transistors using mixed As and Sb based heterostructures;Nanotechnology Reviews;2013-12-01

5. Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors;Applied Physics Letters;2010-12-27

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