A physically based compact device model for fully depleted and nearly fully depleted SOI MOSFET-Reference-Cited by-同舟云学术

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A physically based compact device model for fully depleted and nearly fully depleted SOI MOSFET

Published:1996 Issue:11 Volume:43 Page:1914-1923
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Banna S.R.,Chan P.C.H.,Chan M.,Ko P.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/11745/00543027.pdf?arnumber=543027

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate-controlled gain tuning of fully depleted silicon-on-insulator-based 1 T pixel for in-sensor white balance;Japanese Journal of Applied Physics;2024-02-05

2. Setting of SOI MOSFET Model Parameters based on BP Neural Networks Algorithm;IOP Conference Series: Materials Science and Engineering;2020-03-01

3. Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology;Solid-State Electronics;2015-05

4. Surface Potential-Based Polycrystalline-Silicon Thin-Film Transistors Compact Model by Nonequilibrium Approach;IEEE Transactions on Electron Devices;2013-10

5. A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET;Solid-State Electronics;2008-08

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