Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface-Reference-Cited by-同舟云学术

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Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface

Published:2004 Issue: Volume: Page:
ISSN:
Container-title:Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.
language:
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Author:

Shiraishi K.,Yamada K.,Torii K.,Akasaka Y.,Nakajima K.,Kohno M.,Chikyo T.,Kitajima H.,Arikado T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9327/29638/01345421.pdf?arnumber=1345421

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Comprehensive study on charge trapping property of Si-containing hafnium-oxide polymorph;Japanese Journal of Applied Physics;2016-06-10

3. Role of nitrogen incorporation into Al2O3-based resistive random-access memory;Applied Physics Express;2014-06-17

4. Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65nm CMOS Process;IEICE Transactions on Electronics;2011

5. Future Evolution of CMOS Devices Targeting on High-performance and Low Power;Journal of the Japan Society for Precision Engineering;2008

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