Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6235083/6242429/06242492.pdf?arnumber=6242492
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. The Electrical Properties of a-IGZO TFT Prediction Based on Variational Autoencoder Model;2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan);2023-07-17
3. High-Voltage Amorphous IGZO TFTs with a Drift Region Implemented by an Ultrathin ITO Capping Layer;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
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5. Film-profile-engineered ZnO thin-film transistor with gate/drain offset for high-voltage operation;Japanese Journal of Applied Physics;2019-05-13
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