High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 Å-Reference-Cited by-同舟云学术

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High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 Å

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Container-title:2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)
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Author:

Chin A.,Wu Y.H.,Chen S.B.,Liao C.C.,Chen W.J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6881/18528/00852751.pdf?arnumber=852751

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