Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and L<inf>g</inf> down to 36nm-Reference-Cited by-同舟云学术

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Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

Published:2016-06 Issue: Volume: Page:
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Container-title:2016 IEEE Symposium on VLSI Technology
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Author:

Zhou X.,Waldron N.,Boccardi G.,Sebaai F.,Merckling C.,Eneman G.,Sioncke S.,Nyns L.,Opdebeeck A.,Maes J. W.,Xie Q.,Givens M.,Tang F.,Jiang X.,Guo W.,Kunert B.,Teugels L.,Devriendt K.,Hernandez A. Sibaja,Franco J.,van Dorp D.,Barla K.,Collaert N.,Thean A. V-Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573420.pdf?arnumber=7573420

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