Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate-Reference-Cited by-同舟云学术

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Thermally robust CMOS-aware Ge MOSFETs with high mobility at high-carrier densities on a single orientation Ge substrate

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
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Author:

Lee C. H.,Lu C.,Nishimura T.,Nagashio K.,Toriumi A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6886509/6894335/06894394.pdf?arnumber=6894394

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Mobility Enhancement of (111)-Oriented Extremely Thin Body Ge-on-Insulator nMOSFETs by Flipped Smart-Cut Substrates;IEEE Transactions on Electron Devices;2024-09

2. Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO _x /Al₂O₃ gate stack by ozone oxidation;Journal of Semiconductors;2022-01-01

3. Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing;Japanese Journal of Applied Physics;2018-09-18

4. Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process;IEEE Electron Device Letters;2018-09

5. Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

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