Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx3/4044/11594/00526434.pdf?arnumber=526434
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits;IEEE Transactions on Electron Devices;2016-10
2. A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits;Solid-State Electronics;2004-02
3. PD/SOI SRAM performance in presence of gate-to-body tunneling current;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2003-12
4. On the performance advantage of PD/SOI CMOS with floating bodies;IEEE Transactions on Electron Devices;2002
5. Abnormal transconductance and transient effects in partially depleted SOI MOSFETs;Solid-State Electronics;1999-01
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