Simulation Analysis of an Interleaved Silicon Carbide (SiC) Full-Bridge Converter
Author:
Affiliation:
1. University of Trás-os-Montes and Alto Douro,Department of Engineering,Vila Real,Portugal,5001-801
2. University of Trás-os-Montes and Alto Douro, INESCTEC UTAD Pole,Department of Engineering,Vila Real,Portugal,5001-801
Funder
European Institute of Innovation and Technology (EIT)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10194576/10194600/10194652.pdf?arnumber=10194652
Reference23 articles.
1. Input current ripple cancelation by interleaving boost and Cuk DC-DC converter
2. EMI comparison between Si and SiC technology in a boost converter
3. Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications
4. SiC and Silicon MOSFET Solution for High Frequency DC-AC Converters;abbatelli;PCIM Europe 2018 International Exhibition and Conf for Power Electronics Intelligent Motion Renewable Energy and Energy Manag,2018
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