High Uniformity Ferroelectric MoS2 Nonvolatile Memory Array-Reference-Cited by-同舟云学术

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High Uniformity Ferroelectric MoS2 Nonvolatile Memory Array

Published:2022-08-08 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)
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Author:

Li Chunyang¹,Li Lu²,Li Zhongyi¹,Zhang Fanqing¹,Dong Lixin³,Zhao Jing¹

Affiliation:

1. School of Mechatronical Engineering, Beijing Institute of Technology,Beijing,China

2. Beijing Key Laboratory for Nanomaterials and Nanodevices, Institute of Physics, CAS,Beijing,China

3. City University of HongKong,Department of Biomedical Engineering,HongKong,China

Funder

National Key R&D program of China

National Natural Science Foundation of China (NSFC)

Beijing Institute of Technology Research Fund Program

Beijing Institute of Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9941348/9941352/09941686.pdf?arnumber=9941686

Reference27 articles.

1. 2D Materials

2. Characterization and Application of PVDF and Its Copolymer Films Prepared by Spin-Coating and Langmuir–Blodgett Method

3. Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack

4. High-performance synaptic transistors for neuromorphic computing*

5. Ultrathin Conformable Organic Artificial Synapse for Wearable Intelligent Device Applications

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