Design of Millimetre-Wave Passive Mixer in 45-nm SOI CMOS Technology
Author:
Affiliation:
1. University of Technology,School of Electrical and Data Engineering,Sydney NSW,Australia
2. Mindanao State University -- Iligan Institute of Technology,Microelectronics Laboratory,Iligan City,Philippines
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9998573/9998575/09998670.pdf?arnumber=9998670
Reference15 articles.
1. A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application
2. High gain/power quotient variable-gain wideband low-noise amplifier for capsule endoscopy application
3. An OTA-C filter in SOI CMOS for UWB application
4. Low power, high gain, low noise amplifier (LNA) for ultra wide-band applications
5. A folded-switching mixer in SOI CMOS technology
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 25–40 GHz Low Conversion Loss Passive Ring Mixer in a 45 nm CMOS Silicon-on-Insulator Technology;2023 5th International Conference on Electronic Engineering and Informatics (EEI);2023-06-30
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