A new lateral trench-gate conductivity modulated power transistor-Reference-Cited by-同舟云学术

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A new lateral trench-gate conductivity modulated power transistor

Published:1999 Issue:8 Volume:46 Page:1788-1793
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cai J.,Sin J.K.O.,Mok P.K.T.,Wai-Tung Ng ,Lai P.P.T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/16870/00777171.pdf?arnumber=777171

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unipolar-Turn-Off Lateral Insulated-Gate Bipolar Transistor With On-Chip Biasing Circuit for Injection Control;IEEE Transactions on Electron Devices;2023-09

2. Double-Gate RESURF Lateral Insulated Gate Bipolar Transistor With Built-In p-Channel MOSFET for Active Conductivity Modulation Control Throughout Drift Region;IEEE Electron Device Letters;2022-02

3. A novel low turnoff loss carrier stored SOI LIGBT with trench gate barrier;Superlattices and Microstructures;2016-01

4. A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate;Chinese Physics B;2013-07

5. A new Lateral Trench Electrode IGBT with a p+ diverter;Microsystem Technologies;2003-10-01

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