1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes-Reference-Cited by-同舟云学术

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1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Published:2018-07 Issue:7 Volume:39 Page:1038-1041
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Taifang^ORCID,Ma Jun^ORCID,Matioli Elison^ORCID

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

H2020 European Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8398557/08369131.pdf?arnumber=8369131

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel double channel reverse conducting GaN HEMT with an integrated MOS-channel diode;Chinese Physics B;2023-09-01

2. Performance of an E-mode AlGaN/GaN High-Electron-Mobility Transistor Integrated with a Current Limiting Diode;ECS Journal of Solid State Science and Technology;2023-08-01

3. GaN Power Integration Technology and Its Future Prospects;IEEE Transactions on Electron Devices;2023

4. Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage;IEEE Access;2023

5. Normally-Off p-GaN Gate AlGaN/GaN Transistor with a New Schottky Second Gate;ECS Journal of Solid State Science and Technology;2022-10-01

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