Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz-Reference-Cited by-同舟云学术

Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz

Author:

Ikamas Kestutis¹^ORCID,Cibiraite Dovile²^ORCID,Lisauskas Alvydas¹^ORCID,Bauer Maris²^ORCID,Krozer Viktor²^ORCID,Roskos Hartmut G.²^ORCID

Affiliation:

1. Faculty of Physics, Vilnius University, Vilnius, Lithuania

2. Physikalisches Institut, Goethe-Universität, Frankfurt, Germany

Funder

Lietuvos Mokslo Taryba

Hessian excellence initiative LOEWE–Terahertz-Kamera für die zivile Sicherheitstechnik

EU Horizon 2020 Marie Sklodowska-Curie ITN CELTA project

ESA through the THzFET Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Cited by 76 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

3. Sub-terahertz Near-field Dielectric Sensor in CMOS Technology;2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2024-06-27

4. Sub-terahertz Si CMOS Based Emitters and Detectors;2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2024-06-27