Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz
Author:
Affiliation:
1. Faculty of Physics, Vilnius University, Vilnius, Lithuania
2. Physikalisches Institut, Goethe-Universität, Frankfurt, Germany
Funder
Lietuvos Mokslo Taryba
Hessian excellence initiative LOEWE–Terahertz-Kamera für die zivile Sicherheitstechnik
EU Horizon 2020 Marie Sklodowska-Curie ITN CELTA project
ESA through the THzFET Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/8444771/08418740.pdf?arnumber=8418740
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