Highly accelerated electromigration lifetime test (HALT) of copper

Author:

Aubel O.,Hasse W.,Hommel M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-11

2. Study of the Interfacial Reaction between the Sn-3.5Ag Solder and Electroless Ni-P Metallization;Applied Mechanics and Materials;2013-12

3. Quantitative analysis on median-time-to-fail of copper interconnect with lose object defects;Acta Physica Sinica;2009

4. Optimized structure design for wafer level electromigration tests;2007 IEEE International Integrated Reliability Workshop Final Report;2007-10

5. Investigation of via Bottom Barrier Integrity Impact on Electromigration;2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual;2007-04

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