A DC~67 GHz Memristive RF Switch Based on Conductive-Bridging RAM on High-Resistivity Silicon Substrate
Author:
Affiliation:
1. (Shanghai Jiao Tong University),State Key Laboratory of Radio Frequency Heterogeneous Integration,Shanghai,China,200240
Funder
Science and Technology Commission of Shanghai Municipality
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10221938/10221896/10222107.pdf?arnumber=10222107
Reference8 articles.
1. Nafion-Based Fully Passive Solid-State Conductive Bridging RF Switch
2. Conductive Bridging-Based Memristive RF Switches on a Silicon Substrate
3. Characterization, Optimization, and Fabrication of Phase Change Material Germanium Telluride Based Miniaturized DC–67 GHz RF Switches
4. Scalable mmWave Non-Volatile Phase Change GeTe-Based Compact Monolithically Integrated Wideband Digital Switched Attenuator
5. Nanoscale memristive radiofrequency switches
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