InGaP/GaAs/Ge multi-junction solar cell efficiency improvements using epitaxial germanium-Reference-Cited by-同舟云学术

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InGaP/GaAs/Ge multi-junction solar cell efficiency improvements using epitaxial germanium

Published: Issue: Volume: Page:
ISSN:
Container-title:Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
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Author:

Aiken D.J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7320/19792/00916053.pdf?arnumber=916053

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Manufacturing process for III–V multijunction solar cells on germanium substrates with a total thickness below 60 microns;Progress in Photovoltaics: Research and Applications;2022-03-08

2. Unlocking the potential for extreme solar concentration via subcell segmentation;17TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-17);2022

3. Subcell Segmentation for Current Matching and Design Flexibility in Multijunction Solar Cells;IEEE Journal of Photovoltaics;2020-09

4. Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells;Progress in Photovoltaics: Research and Applications;2020-07-29

5. Optimized duplicated-junction solar cells: An innovative approach for energy harvesting at ultra-high concentrations;AIP Conference Proceedings;2020

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