Performance dependence on grading width of a-SiGe:H component solar cells-Reference-Cited by-同舟云学术

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Performance dependence on grading width of a-SiGe:H component solar cells

Published: Issue: Volume: Page:
ISSN:
Container-title:Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
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Author:

van Swaaij R.A.C.M.M.,Zeman M.,Arnoult S.,Metselaar J.W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7320/19792/00916021.pdf?arnumber=916021

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An expedient semi-empirical modelling approach for optimal bandgap profiling of stoichiometric absorbers: A case study of thin film amorphous silicon germanium for use in multijunction photovoltaic devices;Solar Energy Materials and Solar Cells;2021-06

2. Role of a-Si:H buffer layer at the p/i interface and band gap profiling of the absorption layer on enhancing cell parameters in hydrogenated amorphous silicon germanium solar cells;Optik;2017-05

3. Optimization of a-SiGe:H solar cells with graded intrinsic layers using integrated optical and electrical modeling;Thin Solid Films;2004-03

4. A-Si:H buffer in a-SiGe:H solar cells;Solar Energy Materials and Solar Cells;2002-10

5. Band-gap profiling in amorphous silicon–germanium solar cells;Applied Physics Letters;2002-03-04

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