Inverted GaInP / (In)GaAs / InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions-Reference-Cited by-同舟云学术

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Inverted GaInP / (In)GaAs / InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions

Published:2008-05 Issue: Volume: Page:
ISSN:0160-8371
Container-title:2008 33rd IEEE Photovolatic Specialists Conference
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Author:

Geisz J.F.,Kurtz Sarah R.,Wanlass M.W.,Ward J.S.,Duda A.,Friedman D.J.,Olson J.M.,McMahon W.E.,Moriarty T.E.,Kiehl J.T.,Romero M.J.,Norman A.G.,Jones K.M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4815197/4922425/04922452.pdf?arnumber=4922452

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling;Journal of Computational Electronics;2023-05-02

2. Ultra-lightweight and flexible inverted metamorphic four junction solar cells for space applications;EPJ Photovoltaics;2022

3. Modeling and design for low‐cost multijunction solar cell via light‐trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction;Progress in Photovoltaics: Research and Applications;2019-12-19

4. Colloidal Chemistry in Molten Salts: Synthesis of Luminescent In1–xGaxP and In1–xGaxAs Quantum Dots;Journal of the American Chemical Society;2018-08-20

5. A substrate removal processing method for III–V solar cells compatible with low-temperature characterization;Materials Science in Semiconductor Processing;2017-06

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