Rapid Cu(In,Ga)Se/sub 2/ growth using "end point detection"-Reference-Cited by-同舟云学术

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Rapid Cu(In,Ga)Se/sub 2/ growth using "end point detection"

Published: Issue: Volume: Page:
ISSN:
Container-title:Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
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Author:

Kessler J.,Scholdstrom J.,Stolt L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7320/19792/00915883.pdf?arnumber=915883

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on the developments in copper indium gallium diselenide (CIGSe)-based thin film photovoltaic devices;Journal of Materials Science: Materials in Electronics;2024-05

2. Formation of Cu(In,Ga)S2 chalcopyrite thin films following a 3-stage co-evaporation process;Solar Energy Materials and Solar Cells;2022-04

3. Investigation of co-evaporated polycrystalline Cu(In,Ga)S₂thin film yielding 16.0 % efficiency solar cell;EPJ Photovoltaics;2022

4. Epitaxial growth of CIGSe layers on GaP/Si(001) pseudo-substrate for tandem CIGSe/Si solar cells;Solar Energy Materials and Solar Cells;2021-12

5. Challenges in the deposition of (Ag,Cu)(In,Ga)Se2 absorber layers for thin-film solar cells;Journal of Physics: Materials;2021-01-14

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