Effect of base profile on the base transit time of the bipolar transistor for all levels of injection
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/6850/00277377.pdf?arnumber=277377
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Frequency Response of Optoelectronic Receivers: The Motivation for Faster Transistors;Signals and Communication Technology;2016-10-20
3. Electron Distribution in Non-uniformly Doped NPN Transistors;2011 UKSim 5th European Symposium on Computer Modeling and Simulation;2011-11
4. Base transit time of a bipolar junction transistor considering majority-carrier current;2008 International Conference on Electrical and Computer Engineering;2008
5. Base transit time of a bipolar transistor considering field dependent mobility;International Journal of Electronics;2006-11
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