Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations-Reference-Cited by-同舟云学术

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Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations

Published:2009-05 Issue:5 Volume:56 Page:1118-1127
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cheng Chao-Ching,Chien Chao-Hsin,Luo Guang-Li,Ling Yu-Ting,Chang Ruey-Dar,Kei Chi-Chung,Hsiao Chien-Nan,Liu Jun-Cheng,Chang Chun-Yen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4839017/04801992.pdf?arnumber=4801992

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates;Journal of Vacuum Science & Technology B;2020-09

2. Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD;Journal of Physics D: Applied Physics;2017-09-12

3. The impact of ultrathin Al2O3films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures;Journal of Physics D: Applied Physics;2016-08-30

4. Electrical characterization of dry and wet processed interface layer in Ge/High-K devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

5. $\hbox{Al}_{2}\hbox{O}_{3}$ Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon;IEEE Transactions on Electron Devices;2013-01

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