Novel Double-Gate 1T-DRAM Cell Using Nonvolatile Memory Functionality for High-Performance and Highly Scalable Embedded DRAMs-Reference-Cited by-同舟云学术

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Novel Double-Gate 1T-DRAM Cell Using Nonvolatile Memory Functionality for High-Performance and Highly Scalable Embedded DRAMs

Published:2010-03 Issue:3 Volume:57 Page:614-619
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Park Ki-Heung,Park Cheol Min,Kong Seong Ho,Lee Jong-Ho

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5419130/05409557.pdf?arnumber=5409557

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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