Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning-Reference-Cited by-同舟云学术

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Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning

Published:2009-08 Issue:8 Volume:56 Page:1721-1728
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yun Jang-Gn,Kim Yoon,Park Il Han,Lee Jung Hoon,Kang Daewoong,Lee Myoungrack,Shin Hyungcheol,Lee Jong Duk,Park Byung-Gook

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5170230/05164932.pdf?arnumber=5164932

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient Implementation of Boolean Logic Functions Using Double Gate Charge-Trapping Memory for In-Memory Computing;IEEE Transactions on Electron Devices;2024-03

2. Characteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control;Journal of the Society for Information Display;2017-06

3. Applications of Nanotechnology in Next-Generation Nonvolatile Memories;Introduction to Nano;2015

4. Disturbance characteristics of charge trap flash memory with tunneling field-effect transistor;Japanese Journal of Applied Physics;2014-10-10

5. Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs;IEEE Electron Device Letters;2014-09

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