A 3-Way GaN Doherty Power Amplifier for 28 GHz 5G FR2 Operation
Author:
Affiliation:
1. Politecnico di Torino,Department of Electronics and Telecommunications,Italy
2. University of Roma Tor Vergata,Electronic Engineering Department,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10187996.pdf?arnumber=10187996
Reference16 articles.
1. A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications
2. A Ka-Band Watt-Level High-Efficiency Integrated Doherty Power Amplifier in GaAs Technology
3. A 28-GHz-Band GaN HEMT MMIC Doherty Power Amplifier Designed by Load Resistance Division Adjustment
4. A 24–28-GHz Doherty Power Amplifier With 4-W Output Power and 32% PAE at 6-dB OPBO in 150-nm GaN Technology
5. Ka-Band CMOS Power Amplifier Based on Transmission Line Transformers With Single-Ended Doherty Network
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A GaN MMIC Dual-Asymmetrical-Lange-Coupler-Based Load-Modulated Balanced Amplifier for Back-Off Efficiency Enhancement;IEEE Microwave and Wireless Technology Letters;2024-08
2. A Two-Way GaN Doherty Amplifier for 5G FR2 With Extended Back-Off Range;IEEE Microwave and Wireless Technology Letters;2024-03
3. A Design Approach for Bandwidth Enhancement of 3-Way Doherty PAs;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
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