A W-Band Phase-Shifter-Embedded PA in 40-nm CMOS for 6G Applications
Author:
Affiliation:
1. National Tsing Hua University,Department of Engineering and System Science,Hsinchu,Taiwan
2. National Taiwan University,Department of Electrical Engineering,Taipei,Taiwan
Funder
National Science and Technology Council
National Taiwan University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188021.pdf?arnumber=10188021
Reference10 articles.
1. A 26.4-dB Gain 15.82-dBm 77-GHz CMOS Power Amplifier With 15.9% PAE Using Transformer-Based Quadrature Coupler Network
2. A 25.5-dB Peak Gain $F$ -Band Power Amplifier With an Adaptive Built-In Linearizer
3. An E-Band Power Amplifier With Broadband Parallel-Series Power Combiner in 40-nm CMOS
4. A 1.2-V 5.2-mW 20–30-GHz wideband receiver front-end in 0.18-?m CMOS;li;IEEE Trans Microw Theory Techn,2014
5. A 76-Gbit/s 265-GHz CMOS Receiver With WR-3.4 Waveguide Interface
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