New approach for the assessment of the effect of plasma induced damage on MOS devices and subsequent design manual rules
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/4459377/4469203/04469222.pdf?arnumber=4469222
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Anomaly of NBTI data for PMOS transistors degraded by plasma processing induced charging damage (PID);2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09
2. Fast Wafer Level Reliability Monitoring: Quantification of Plasma-Induced Damage Detected on Productive Hardware;IEEE Transactions on Device and Materials Reliability;2009-06
3. Review on the reliability characterization of plasma-induced damage;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
4. Quantitative reliability assessment of Plasma Induced Damage on product wafers with fast WLR measurements;2008 IEEE International Integrated Reliability Workshop Final Report;2008-10
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