Reliability issues related to Fast Charge Loss Mechanism in Embedded Non Volatile Memories
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4098668/4079457/04098690.pdf?arnumber=4098690
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Source and Channel Coding Approach for Improving Flash Memory Endurance;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2018-05
2. Modelling of initial fast charge loss mechanism for logic embedded non-volatile memories;Microelectronics Reliability;2017-09
3. Origin of Initial Rapid Cell Current Reduction in Non-Volatile One-Time Programming Memory;IEEE Electron Device Letters;2016-02
4. Contact etch stop a-Si[sub x]N[sub y]:H layer: A key factor for single polysilicon flash memory data retention;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
5. Ageing under illumination of MOS transistors for active pixel sensors (APS) applications;2008 IEEE International Integrated Reliability Workshop Final Report;2008-10
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