Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO<inf>2</inf>/SiO<inf>2</inf> and SiO<inf>2</inf> MOS Gate Stacks-Reference-Cited by-同舟云学术

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Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

Published:2008-10 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Integrated Reliability Workshop Final Report
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Author:

Southwick Richard G.,Reed J.,Buu C.,Bui H.,Butler R.,Bersuker G.,Knowlton W.B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4784682/4796060/04796084.pdf?arnumber=4796084

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