Design of High Power Converter with Single Low RonDiscrete SiC Device
Author:
Affiliation:
1. The University of Texas at Austin,Semiconductor Power Electronics Center (SPEC),Austin,Texas,USA
2. University of Missouri,Department of Electrical Engineering and Computer Science,Columbia,Missouri,USA
Funder
Oak Ridge National Laboratory
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955282.pdf?arnumber=9955282
Reference16 articles.
1. Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter
2. Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications
3. Highly accurate virtual dynamic characterization of discrete SiC power devices
4. Methodology for Wide Band-Gap Device Dynamic Characterization
5. A frequency-domain study on the effect of DC-link decoupling capacitors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modelling the Effect of the DC Link Decoupling Capacitor of a Commutation Power Loop Using a Thevenin-Based Frequency Domain Approach;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
2. High Power Converter Busbar in the New Era of Wide-Band-Gap Power Semiconductor;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
3. Testing Methodology for Wide Bandgap High Power Converter with Limited Lab Resources;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3