High-Power $1.5 \mu \mathrm{m}$ InGaAsP/InP BH Laser Having Dilute Waveguide Structure-Reference-Cited by-同舟云学术

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High-Power $1.5 \mu \mathrm{m}$ InGaAsP/InP BH Laser Having Dilute Waveguide Structure

Published:2023-11-04 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM)
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Author:

Jing Guo¹,Huan Li¹,Lingjuan Zhao¹,Daibing Zhou¹,Song Liang¹

Affiliation:

1. Institute of Semiconductors, Chinese Academy of Sciences,Key Laboratory of Semiconductor Materials Science,Beijing,China,100083

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10368381/10368607/10368807.pdf?arnumber=10368807

Reference6 articles.

1. Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm

2. High-Extinction-Ratio and Compact 1310/1550 nm Wavelength Diplexer on SOI Platform Based on an SWG-Structured Two-Mode Interference Coupler

3. High linearity silicon DC Kerr modulator enhanced by slow light for 112 Gbit/s PAM4 over 2 km single mode fiber transmission

4. 1 W fibre coupled power InGaAsP∕InP 14xx pump laser for Raman amplification

5. Record-High Power 1.55-μm Distributed Feedback Laser Diodes for Optical Communication

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