CdTe diode detectors with a p-n junction formed by laser-induced doping-Reference-Cited by-同舟云学术

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CdTe diode detectors with a p-n junction formed by laser-induced doping

Published:2011-10 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE Nuclear Science Symposium Conference Record
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Author:

Gnatyuk V.A.,Aoki T.,Vlasenko O.I.,Levytskyi S.N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6144196/6152483/06154699.pdf?arnumber=6154699

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of diffusion motion of In nanoparticles in a CdTe crystal during laser-induced doping;Physics and Chemistry of Solid State;2021-05-26

2. Influence of laser radiation on optical properties of high resistivity crystals CdTe and solid solutions Cd1-xZnxTe;Фізика і хімія твердого тіла;2020-03-28

3. PECULIARITIES OF PREPARATION OF CdTe p-n JUNCTIONS AND CARRIER TRANSPORT IN THEM;Optoèlektronika i poluprovodnikovaâ tehnika;2017-12-15

4. Characterization of Functional Layers of CdTe Crystals Subjected to Different Surface Treatments;IEEE Transactions on Nuclear Science;2015-04

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