Metal-oxide-semiconductor instability produced by electron-beam evaporation of Aluminum gates
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31778/01479566.pdf?arnumber=1479566
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New concepts for integrated solid state detector electronics;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1988-12
2. Device quality MOS Gate insulators: Sputter deposition and low temperature processing;IEEE Electron Device Letters;1982-10
3. Effect of hydrogen-argon mixing for sputtered aluminum metallization on MOS devices;IEEE Transactions on Electron Devices;1981-10
4. Electrical damage in MOS devices by RF diode sputtered aluminum metallization;IEEE Transactions on Electron Devices;1981-07
5. Defects in Si/SiO2 structures introduced by sputter metallization;Thin Solid Films;1981-01
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